Scanning ion conductance microscopy (SICM), which was introduced in 1989
[1], is a nanoscale imaging technology that is based on the use of a nanopipette tip that scans the area above a sample. By monitoring the ion current flowing through the nanopipette to maintain the tip–sample separation at a distance approximately equal to the inner radius of the tip, SICM applies a negligible force on the sample. Thus, SICM can provide precise height measurements for soft materials on nanoscale level
[2]. Because of its noninvasive, high-resolution, and non-force contact imaging characteristics, SICM has become a promising tool in different fields. In biology
[3], it is used for noninvasive imaging
[4], nano-injection
[5], single-cell nanobiopsy
[6], noncontact mechanical stimulation
[7], and smart patch clamp
[8]. In electrochemistry, it is used for simultaneous topographical and electrochemical detection
[9],
[10] and mapping the surface activity of individual nanoparticles
[11], whereas in physics, it is used to provide a novel light source for scanning near-field optical microscopy
[12].
There are several main scanning modes that are used to regulate the tip–sample distance in SICM. The simplest one is dc mode
[13], in which the current induced by a fixed dc bias voltage is directly used as the feedback during scanning. However, the dc mode is rarely used in practice because of its current instability (dc drift), which is attributed to either slowly developing dc potentials at the electrode tip or temperature fluctuations. To address the problem of dc drift, the ac mode was introduced
[14],
[15], which is a more reliable and robust control mode. Similar to the tapping mode of atomic force microscopy (AFM)
[16],
[17], in the ac mode, either the tip or the stage vibrates at a modulation frequency
f in the
z-axis direction, producing an induced ac current at the same modulation frequency
f when the tip is close to the sample. The induced ac current is then used to control the tip–sample separation. However, the modulation frequency in the ac mode is limited by the response bandwidth of the piezoactuator and is usually within the range of 1 kHz to several kilohertz
[14],
[15]. This low modulation frequency limits the bandwidth of the overall feedback loop, therefore reducing the scanning speed
[18] (please refer to
Appendix I for further details). The Besenbacher group reported that imaging the same sample using SICM in ac mode at a modulation frequency of 1 kHz is five times slower than using conventional AFM in tapping mode at 34 kHz
[2]. Another well-known SICM imaging mode is the hopping mode
[4] and its variants
[19]–
[22]. By functioning as conducting an approach curve at every point, the hopping mode and its variants are able to image steep obstacles without collisions and are therefore suitable for imaging complex samples. However, the hopping mode is considerably slow because of the point-by-point approach.
Recently, two similar SICM imaging modes have been independently introduced by two research groups, namely, the bias-modulated (BM) mode
[23], which was proposed by the Unwin group, and the in-phase bias modulation (IPBM) mode
[24], which was proposed by our group. In both of these modes, instead of vibrating the tip or the stage, an ac current is induced by an alternative voltage applied between the electrodes. The induced ac current is then used as the feedback to regulate the tip–sample separation during scanning. These two modes not only have the advantages of the traditional ac mode, including being free of dc drift and immune to low-frequency external electrical interference, but also possess the benefits of the dc mode, including high scanning speed and the absence of mechanical oscillation. In BM-SICM, either the amplitude or the phase component of the ac current is used for feedback. However, the sensitivity of the amplitude or the phase to the tip–sample separation significantly decreases with an increase in the modulation frequency; thus, it may not work at a relatively high frequency (i.e., over 10 kHz). In IPBM-SICM, only the part of the ac current that is in phase with the applied ac voltage is used for feedback. Our experiments show that IPBM-SICM can work stably at a higher modulation frequency (more than 10 kHz) and can therefore realize a faster scanning speed
[24].
Although the IPBM mode has a good potential for the development of high-speed SICM, the modulation frequency is still limited by the low-signal-to-noise ratio (SNR) in the IPBM mode. Because of the capacitance effect in the circuit, the ratio of the in-phase part of the ac current to the total ac current becomes increasingly smaller as the frequency continues to increase. However, a further increase in the amplitude of the applied voltage will not solve the problem as the maximum allowable amplitude of the induced ac current is limited by the input range of the lock-in amplifier.
In this paper, we propose a capacitance compensation (CC) method to solve the low-SNR problem in IPBM-SICM. The CC method significantly increases the signal level while the noise level remains unchanged. The increased SNR not only significantly improves the image quality but also allows the system to work at a higher modulation frequency and, thus, a higher scanning speed. In our system, a maximum modulation frequency of 25 kHz, which is comparable with the typical tapping frequencies in AFM, has been tested for the IPBM mode that is enabled by the CC method, which yields a satisfactory performance. As a result, the IPBM-SICM with CC is expected to have a similar scanning speed as that obtained by AFM in tapping mode. We performed experiments on scanning over polydimethylsiloxane (PDMS) samples to verify the advantages of this method.
SECTION II.
Introduction to IPBM-SICM
The schematic of our IPBM-SICM system was reported in our previous work
[24] and is illustrated in
Fig. 1. In IPBM-SICM, a sinusoidal voltage signal 10
Uac, with frequency
f, is generated by a function generator and then attenuated by ten times through a patch clamp amplifier. The voltage signal is then applied across the two electrodes, i.e., one inside the nanopipette and the other in the solution. An ac current is induced by the ac voltage, which is amplified by the
I–
V converter in the patch clamp amplifier. The amplified ac current signal (in units of voltage) is then sent to a lock-in amplifier. The lock-in amplifier detects the portion of the amplified ac current that is locked at frequency
f and then splits the portion into two parts. The part that is in phase with the driving sinusoidal voltage (the ten times X-output of the lock-in amplifier; please refer to
Appendix II) is amplified tenfold and used as a feedback input to control the tip movement along the
z-axis. In addition, a bias dc voltage
Udc can be optionally superimposed onto the applied voltage between the electrodes without affecting the ac signals.
A. Circuit Analysis of IPBM-SICM
The equivalent circuit of the pipette–sample system in IPBM-SICM is described in our previous work
[24] and is illustrated in
Fig. 2. The pipette resistance inside the pipette, i.e.,
Rp, is in series with the resistance of the tip opening region, i.e.,
Rt, and both of these are in parallel with pipette capacitance
Cp. Then, the combined
Rp,
Rt, and
Cp are in series with bath electrolyte resistance
Rb. Stray capacitance
Cstray is in parallel with the above combination. By simultaneously applying an ac voltage
Uac at an angular frequency
ω (2πf) coupled with a dc voltage
Udc across the two electrodes, the value of the above parameters can be determined by the following measurements, assumptions, and calculations
[25].
First, we calculate capacitance
Cstray by assuming that capacitance
Cstray remains constant. This assumption is reasonable as the overall external circuit does not change during the experiment. On the basis of this assumption, we can obtain capacitance
Cstray in advance before the pipette is immersed into the solution [position a, as shown in
Fig. 3(a)], where
Rp is infinite and
Cp is almost zero. In this position, almost all of the current passes through
Cstray. Assuming that the total ac current is measured as
I∗ac,
Cstray can be calculated by
Cstray=I∗ac/(Uac×ω).(1)
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\begin{equation*}C_{\mathrm{stray}}=I_{\mathrm{ac}}^{\ast}/(U_{\mathrm{ac}}\times\omega).\tag{1}\end{equation*}Second, determine
Rp and
Rt by assuming that
Rt is equal to zero when the tip is immersed into the solution but is still far from the sample [position b, as shown in
Fig. 3(b)]. At position b [see
Fig. 3(b)], we can obtain the amplitude of the ac current
Iac, phase
θ, and the dc current
Idc.
Iac and
θ are measured from the lock-in amplifier directly, where
Idc is calculated by averaging the total current during several tens of modulated periods. According to the dc current path and assuming that
Rdc=Rp+Rt+Rb where
Rdc is the dc resistance, we obtain the following equation:
Rp+Rt+Rb=Rdc=Udc/Idc.(2)
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\begin{equation*}R_{p}+R_{t}+R_{b}=R_{\mathrm{dc}}=U_{\mathrm{dc}}/I_{\mathrm{dc}}.\tag{2}\end{equation*}Overall admittance
Y can be expressed as
Y(jω)=A+jB(3)
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\begin{equation*}Y(j\omega)=A+jB\tag{3}\end{equation*}where
A=Iac×cosθ/Uac, and
B=Iac×sinθ/Uac, which can be measured experimentally. The admittance can be also calculated by analyzing the theoretical circuit as follows:
Y(jω)=b(1+x2a)1+x2a2+j(bx(1−a)1+x2a2+ωCstray)(4)
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\begin{equation*}Y(j\omega)=\frac{b(1+x^{2}a)}{1+x^{2}a^{2}}+j\left(\frac{bx(1-a)}{1+x^{2}a^{2}}+\omega C_{\mathrm{stray}}\right)\tag{4}\end{equation*}where
b=1/Rdc,
a=bRb, and
x=ωCp(Rp+Rt). By combining
(2)–
(4) with three available measured quantities, including the amplitude of ac current
Iac, the phase of the ac current
θ, and the dc current
Idc, the unknowns
Rb, the combination of
Rp and
Rt, and
Cp can be calculated by
Rb=(A+(B′)2A−b)−1Rp+Rt=1b−RbCp=1ω×1Rb×11−bRb×(A−b)B′(5)(6)(7)
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\begin{align*}&\,R_{b}=\left(A+\frac{(B^{\prime})^{2}}{A-b}\right)^{-1}\tag{5}\\&\,R_{p}+R_{t}=\frac{1}{b}-R_{b}\tag{6}\\&\,C_{p}=\frac{1}{\omega}\times\frac{1}{R_{b}}\times\frac{1}{1-bR_{b}}\times\frac{(A-b)}{B^{\prime}}\tag{7}\end{align*}where
B′=B−ωCstray.
Rt changes with the tip–sample distance, whereas
Rp remains constant as it only depends on the geometric shape of the tip. When the tip is far from the sample,
Rt can be considered to be zero, and
Rp and
Rb can be calculated using
(5) and
(6).
Lastly, when the tip is close to the sample [position c, as shown in
Fig. 3(c)],
Rt increases as the tip–sample separation decreases. As the known
Rp remains constant, the changes of other parameters, including
Rt,
Rb, and
Cp, can be calculated from
(5),
(6), and
(7), respectively. Finally, all of the parameters can be obtained.
Table I shows a group of parameters obtained for a specific pipette in one experiment using the aforementioned procedures.
B. Simplified Circuit
In our experiment,
Rb is almost negligible as its magnitude is about three orders less than that of
Rp, as shown in
Table I, which was obtained using a tip with an inner radius of approximately 75 nm. The same conclusion can be also made through experimental results of Unwin group
[23]. Therefore, we can neglect
Rb to obtain a simplified circuit, as shown in
Fig. 4. In the simplified circuit, the total capacitance
Ctotal, which includes capacitance
Cstray and capacitance
Cp, is in parallel with the total resistance, which is called the solution resistance
Rsol. The current through the solution resistance path, i.e.,
Isol, is in phase with the applied ac voltage and can be obtained by finding the product of
Iac and
cosθ, as shown in
Fig. 4(b). The in-phase current is inversely related to the solution resistance
Rsol and is thus sensitive to the tip–sample separation. As a result, it can be used as a feedback signal to regulate the tip–sample separation. Using the simplified circuit model, dc voltage
Udc is not needed for the calibration of all parameters. The unknown parameters
Rsol and
Ctotal in the simplified circuit model can be calculated by
Rsol=Ctotal=Uac/(Iac×cosθ)(Iac×sinθ)/(Uac×ω).(8)(9)
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\begin{align*}R_{\mathrm{sol}}=&\,U_{\mathrm{ac}}/(I_{\mathrm{ac}}\times\cos\theta)\tag{8}\\C_{\mathrm{total}}=&\, (I_{\mathrm{ac}}\times\sin\theta)/(U_{\mathrm{ac}}\times\omega).\tag{9}\end{align*}
From
(8) and
(9), we can determine the solution resistance
Rsol and capacitance
Ctotal from our experimental measurements and hence obtain their dependence on the tip–sample separation, as shown in
Fig. 5.
Fig. 5(a) indicates that the solution resistance
Rsol increases but the capacitance
Ctotal remains relatively unchanged when the tip–sample separation is reduced. In addition, the zoomed-in data in
Fig. 5(b) show that
Ctotal slightly increases when the tip is very close to the sample surface, which may be the reason why
Iac slightly increases with the decrease in the tip–sample separation, as shown in
Fig. 6. This current increase may be also attributed to additional capacitance paths that were formed in the vertical direction of the tip region that accompanied the increase in resistance
Rt.
Fig. 6 shows the experimental approach curves that were obtained when the pipette tip approached the Petri dish. These curves show the relationships between different parameters with respect to the tip–sample separation. The total ac current
Iac remains relatively constant because it flows mainly through the dominant capacitance path, and it will remain almost constant with relatively constant capacitance. However, the inset in
Fig. 6 shows that current
Iac slightly increases because of the slightly increased capacitance, as previously discussed. The approach curves of the dc current
Idc (see the black line in
Fig. 6) and the in-phase ac current
Isol (see the red line in
Fig. 6) reflect the sensitivity of the control feedback to the tip–sample separation in the dc mode and IPBM mode, respectively.
Fig. 6 shows that, as the tip approaches the sample, the sensitivity of the IPBM mode is initially the same as that of the dc mode; however, it becomes less than that of the dc mode as the tip moves closer to the sample surface. This loss in sensitivity may be attributed to the increasing sample capacitance at smaller tip–sample separation
[26]. In our experiment, we chose the control setpoint to be 94%–98% of the reference current
Isol (recorded far from the sample), and it is located in the overlapping region of the current
Isol and current
Idc approach curves. Therefore, the selected setpoint value will provide control performance that is similar to that in the dc mode.
SECTION III.
CC in IPBM-SICM
The low-SNR problem in IPBM-SICM is caused by the low signal level of the in-phase current
Isol, which is determined by
Uac and
Isol as
Isol=Uac/Rsol.(10)
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\begin{equation*}I_{\mathrm{sol}}=U_{\mathrm{ac}}/R_{\mathrm{sol}}.\tag{10}\end{equation*}When the tip is far away from the sample surface,
Rsol is constant, and at its minimum value, the reference value of
Isol can be obtained using
(10). During scanning,
Isol is set to 94%–98% of the reference
Isol as a control point to regulate the tip movement. However, the magnitude of the reference
Isol is limited by the maximum allowable value of the driving
Uac, which has to be set to a sufficiently low value to ensure that the total induced ac current
Iac is within the input range of the lock-in amplifier (i.e., 1 Vrms in SR830). In the experiment,
Ctotal is relatively large and
Icap is the dominant contributor to the total ac current
Iac. Thus,
Icap defines the maximum value of
Uac to allow
Iac to satisfy the input requirement of the lock-in amplifier. For example, using the capacitance and the resistance, as shown in
Fig. 5, capacitance
Ctotal is 6.2 pF and solution resistance
Rsol is 35
MΩ. The gain of the
I–
V converter in the patch clamp amplifier is set to 0.1 mV/pA, and the RMS value of
Iac in the SR830 should be less than 10 nA. Therefore, the RMS value of
Uac should be less than 17 mV. This low
Uac limits the
Isol signal to 489 mV after amplifying tenfold through SR830. The half peak-to-peak value of the noise
Unoise in the experiment is determined by the setting of the lock-in amplifier, usually approximately 10 mV (the lock-in amplifier is set at status II; please refer to
Appendix III). Therefore, the noise is greater than 2% of the reference
Isol, and the setpoint should be set to much lower than 98%. Moreover, the SNR problem becomes worse at a higher modulation frequency. When
f increases to 25 kHz, the reference
Isol signal is limited to 293 mV, and in this case, the setpoint should be set to much less than 96.5%.
To solve the problem of low SNR, we introduce the CC method in IPBM-SICM. After incorporating CC, the proportion of
Icap in
Iac is suppressed, and the driving voltage
Uac can therefore be set to a higher value to obtain a larger reference
Isol. As shown in
Fig. 7(a), there is an additional current path through the extra capacitance
Ccomp and the operational amplifier
A1. The addition of this extra current
Icomp is in the opposition direction to
Icap and is positively associated with
Icap. Their relationship can be derived as
Icomp=Icap×(A1−1)Ccomp/Ctotal.(11)
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\begin{equation*}I_{\mathrm{comp}}=I_{\mathrm{cap}}\times(A_1-1)C_{\mathrm{comp}}/C_{\mathrm{total}}.\tag{11}\end{equation*}
As shown in
Fig. 7(b), under a constant
Uac, the occurrence of
Icomp effectively reduces
Icap in
Iac but does not affect the amount of
Isol in
Iac. Thus, CC changes
Iac into a lower value
I0ac, and it also increases the proportion of
Isol in
Iac. A larger
Uac can therefore be applied before current
Iac saturates the input range of the lock-in amplifier. According to
(10),
Isol is directly proportional to
Uac. As a result, the SNR can be improved when the noise level remains unchanged. Equation
(11) shows that the degree of compensation can be adjusted by the value of capacitance
Ccomp. A larger CC means that a larger
Uac can be set, and hence, a better SNR can be achieved. However, optimal compensation occurs when
Ccomp is equal to
Ctotal/(A1−1). Under this optimal compensation,
Icap is totally compensated by
Icomp, and
Uac can be set to a maximally allowable value to maximize
Isol, thus maximizing the SNR. The improvement in the SNR can be verified by the experimental approach curves at different
Ccomp values, as shown in
Fig. 8. Without CC,
Uac is limited to 22 mV, causing the noise to be approximately 3% of the reference
Isol (see the green line in
Fig. 8). When values of 3.5 and 5 pF are compensated,
Uac can be increased to 60 and 160 mV, respectively. After CC, we observe both an increased
Isol and an improved SNR.
In summary, the IPBM mode with CC is expected to offer the following improvements over the pure IPBM mode.
At the same modulation frequency and tip–sample separation, the IPBM mode with CC has a better error image quality because of a higher SNR.
At the same modulation frequency, the IPBM mode with CC causes less distortion on samples because of the larger tip–sample separation.
The IPBM mode with CC can operate at a larger modulation frequency due to the improved SNR.
The IPBM mode with CC can operate at a higher speed because of allowable expanding bandwidth of the lock-in amplifier.
SECTION IV.
Units' Experiment Verification and Discussions
A. System Setup
The setup of the IPBM-SICM system with CC is essentially the same as the homemade SICM system previously reported
[24] (as shown in
Fig. 9). The system consists of a scan head, a closed-loop feedback control module based on a control computer running a real-time Linux operation system, and a human–computer interaction module that is based on a host computer running the Windows XP operating system. The scan head is equipped using an XY scanner with a maximum XY scan range of
100 μm×100 μm (Physik Instrumente, P517.3CD), an independent
z-axis piezo with a range of 38 μm (Physik Instrumente, P753.31C), and a three-axis motorized stage (9062-XYZ-PPP, New Focus Corporation, USA) for the large movement of the tip with submicrometer resolution. The control computer, which is equipped with a data acquisition card (PCI-6251, National Instruments, USA), samples the feedback input
Isol and the actual displacement of the
z-axis piezo, runs the control module, and outputs the control value to regulate the XYZ movement of the tip or sample. The host computer communicates with the control computer via the Internet and provides the interface through which the user can control the scanning procedure or display the topography of the sample. Other key and peripheral devices of the system include an optical microscope, a function generator (Tektronix, AFG3022B), a patch clamp amplifier (Heka, EPC800USB), a lock-in amplifier (Stanford Research Systems, SR830), a piezocontroller, and a motorized stage controller. In addition, the CC circuit is the built-in part of the patch clamp amplifier.
All nanopipettes were fabricated from 1.0-mm-outer-diameter 0.5-mm-inner-diameter borosilicate capillaries (1B100F-4, World Precision Instruments, Shanghai Trading Company Ltd., China) using a CO
2-laser-based pipette puller (P2000, Sutter Instrument, USA), providing tip openings with inner radii of approximately 75 nm and a half cone angle of 4
∘–5
∘ (confirmed by SEM data, data not shown). In our experiment, the nanopipette was backfilled with a phosphate buffer solution (PBS) and immersed in the PBS solution, and dc resistance
Rdc was found to be approximately 40–50 MΩ.
In this paper, the ac current
Iac was amplified by the
I–
V converter in the patch clamp amplifier at a gain of 0.1 mV/pA, and cutoff filter frequency is set at 100 kHz. The lock-in amplifier detects the amplitude, phase, and
X-out (see
Appendix II) of the ac current and outputs the RMS values after they are amplified by a factor of ten times. The values of
Uac are set at the maximally allowable value for which
Isol does not saturate the lock-in amplifier input.
B. Sample Preparation
A microgrid made from PDMS was prepared to test the performance of the CC method in IPBM-SICM. The microgrid was fabricated using a soft lithographic approach
[27] as follows. First, a 10 : 1 mixture of PDMS and curing agent (Sylgard 184, Dow Corning) was poured onto a master mold, which is a silicon calibration grating (Digital Instruments, P/N 498-000-026) with a 10-μm pitch and a 200-nm step depth), and it was then baked on a hotplate (PC-600, Corning Inc., USA) at 70
∘C for 4 h. Then, PDMS was peeled from the master mold after PDMS had hardened. Finally, a replica of the microgrid in PDMS was obtained with which the surface contacting the master mold was imprinted with the microgrid structure.
C. Applying CC With the Same Tip–Sample Separation as in the Pure IPBM Mode
To investigate how the CC improves the SNR, we first compare the scan results obtained with and without CC by maintaining the same tip–sample separation during scanning. As shown in
Fig. 10, when applying CC or not, the height images seem similar; however, the error images seem different. In error images, fine structures pointed by the arrows can be only distinguished from the background noise with CC, which is due to the improved SNR. Without CC,
Uac is limited to 22 mV and the error signal of fine structures is covered by the noise, as shown in
Fig. 10(b). On the contrary, the expanding signal will stand out from the same noise level after CC when
Uac is set to 60 mV, as shown in
Fig. 10(d). Therefore, the quality of the error image in the IPBM mode is improved with the CC method because of the improved SNR.
D. Applying CC With Larger Tip–Sample Separation
With the CC method, a larger tip–sample separation (higher setpoint) can be applied during scanning. Without compensation, the setpoint should be set to lower than 98% because of the low SNR (see the green line in
Fig. 8). When values of 3.5 or 5 pF are compensated, the setpoint can be set to be 98% with an increased value of
Uac. Moreover, the experimental results show that images obtained with enough CC, which allow a large tip–sample separation [see
Fig. 11(f)], have similar quality to those obtained without CC, which requires a small tip–sample separation [see
Fig. 11(a)]. However, as shown in the red circle in
Fig. 11(h), at larger tip–sample separation with smaller CC, i.e., 3.5 pF, parachuting (image blurring in the downhill region of grating) issue occurs sometimes due to the relatively low SNR (see the red line in
Fig. 8). In addition, a larger tip–sample separation reduces the sample distortion during scanning. During practical operation, the electrolyte filling level is always different from the equilibrium value that is determined by the capillary tension, which leads to a hydrostatic force that is inversely proportional to the tip–sample separation
[28]. In this case, the sample suffers from a larger hydrostatic force as the tip–sample separation is reduced, thus causing a larger sample distortion.
E. Applying CC at Larger Modulation Frequency
With the CC method, a larger modulation frequency can be applied during scanning. When the modulation frequency is set to 15 kHz, without CC
Uac is limited to 20 mV, we can obtain the image at 94% setpoint, although the SNR [see the red line in
Fig. 12(f)] is very low. If
f increases to 25 kHz,
Iac will increase and
Uac has to be reduced to a lower value (limited to 9.5 mV). This will further reduce
Isol, and thus, the noise to reference
Isol becomes larger [see the green line in
Fig. 12(f)]. Such a low SNR is unacceptable for imaging. However, after applying CC with a larger
Uac, the SNR can be significantly improved [see the blue line in
Fig. 12(f)], and it can be also improved at a larger modulation frequency of 25 kHz [see the black line in
Fig. 12(f)]. Therefore, with the improved SNR after CC, SICM can function at a larger modulation frequency, i.e., 25 kHz. Moreover, the line profiles show that the images' quality with CC [see
Fig. 12(c) and (d)] seems similar with the one obtained without CC [see
Fig. 12(a)]. However, the low-SNR problem can be also inferred from the error images, and the one without CC (data not shown) is more blurring.
F. Applying CC at Higher Scan Speed
With the CC method, a larger scan speed can be used during scanning. Without CC, when the modulation frequency is set to 15 kHz and the setpoint is set to 94%,
Uac is limited to 20 mV, and hence, the SNR limits the lock-in amplifier to set at status II. Such induced low bandwidth of the lock-in amplifier makes the gain parameters of PID control larger enough to avoid parachuting or to shorten the parachuting period
[29]. However, with large gain parameter, tip will be easy to overshoot [see the red line in
Fig. 13(e)] at the uphill of grating when scan rate is 0.5 Hz, as shown in
Fig. 13(a). It becomes worse when the scan speed increases to 0.75 Hz, as shown in
Fig. 13(b). CC method improves the SNR problem and lets the lock-in amplifier work at status IV, expanding the bandwidth of the lock-in amplifier (please refer to
Appendix III). With the expanding bandwidth, no overshoot is found in the image [see
Fig. 13(c)] even the one with a faster scan rate at 0.75 Hz [see
Fig. 13(d)]. Therefore, with the improved SNR after CC, SICM can function at a larger scan rate frequency, i.e., 0.75 Hz. In addition, our current speed is limited by the bandwidth of the piezoactuator. When at the increasing further scan rate, i.e., 1 Hz, oscillating problem will start to occur (data not shown), and it would not help with a higher modulated frequency.
In summary, we have developed a CC method to solve the low-SNR problem in IPBM-SICM, and the effectiveness of the proposed CC method was shown by performing imaging on PDMS samples at different tip–sample separations and different modulation frequencies. The CC method not only allows the IPBM-SICM to work at larger tip–sample separations but also be capable to work at larger modulation frequencies. These improvements will reduce the tip–sample force and improve the scan speed in IPBM-SICM. Thus, it will provide further opportunities for fast imaging of living cells in our future work.
Appendix I
Modulation Frequency Versus Scanning Speed
Similar to the theoretical consideration of the maximum scan speed in the tapping mode AFM proposed by the Ando group
[30],
[31], in IPBM-SICM, we can derive the relationship between the scanning speed and the modulation frequency
f. Assuming that the sample has a sinusoidal shape with periodicity
λ, for an
N×N-pixel image, the smallest imaging acquisition time
T of SICM can be expressed as
T>16npN2/(λf)(12)
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\begin{equation*}T > 16npN^{2}/(\lambda f)\tag{12}\end{equation*}where
n is the minimum number of waves for the RMS of current
Isol and
p is the pixel size. Therefore, the smallest imaging acquisition time is limited by the modulation frequency
f. This relationship between the imaging time and the modulation frequency also applies in the traditional ac mode SICM. In our system, a higher modulation frequency (greater than 25 kHz) is realized, which is much higher than that in the traditional ac mode (limited to be 1 kHz to several kilohertz), and is expected to help accelerate the scan speed.
Appendix II
X-Output of the Lock-in Amplifier
Dual-phase lock-in amplifiers such as SR830 have two phase-sensitive detectors (PSDs): One multiplies the input signal by the reference signal (provided by either the internal oscillator or an external source), whereas the other multiplies the signal with the reference signal shifted by 90
∘.
Assuming that the input signal and reference signal are
Vsigsin(ωsigt+θsig) and
Vrefsin(ωreft+θref), respectively, the product of the first PSD is
Vpsd1==Vsigsin(ωsigt+θsig)⋅Vrefsin(ωreft+θref)1/2VsigVrefcos[(ωsig−ωref)t+(θsig−θref)]−1/2VsigVrefcos[(ωsig+ωref)t+(θsig+θref)](13)
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\begin{align*}{\hskip-7.5pt}V_{\mathrm{psd1}}\!=&\,V_{\mathrm{sig}}\sin(\omega_{\mathrm{sig}}t+\theta_{\mathrm{sig}})\cdot V_{\mathrm{ref}}\sin(\omega_{\mathrm{ref}}t+\theta_{\mathrm{ref}})\nonumber\\=&\,1/2V_{\mathrm{sig}}V_{\mathrm{ref}}\cos\left[(\omega_{\mathrm{sig}}-\omega_{\mathrm{ref}})t+(\theta_{\mathrm{sig}}-\theta_{\mathrm{ref}})\right]\nonumber\\&\!-1/2V_{\mathrm{sig}}V_{\mathrm{ref}}\cos\left[(\omega_{\mathrm{sig}}+\omega_{\mathrm{ref}})t+(\theta_{\mathrm{sig}}+\theta_{\mathrm{ref}})\right]\tag{13}\end{align*}where the first part of the PSD output is at the difference frequency
(ωsig−ωref), and the latter is at the sum frequency
(ωsig+ωref). After the PSD output passes through a low-pass filter, the ac component will be removed. In addition, if
ωsig is not equal to
ωref, then the two parts are ac signals and nothing will remain; otherwise, the component at the difference frequency will be a dc signal and will remain. In this case, the first filtered PSD output
Vpsd1 will be
Vpsd1=1/2VsigVrefcos(θsig−θref).(14)
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\begin{equation*}V_{\mathrm{psd1}}=1/2V_{\mathrm{sig}}V_{\mathrm{ref}}\cos(\theta_{\mathrm{sig}}-\theta_{\mathrm{ref}}).\tag{14}\end{equation*}Setting
X=Vsigcosθ and letting
θ be the phase difference between the signal and reference, and using
(14),
X can be calculated by dividing
Vpsd1 by a known parameter 1/2
Vref.
X is also called the “in-phase” component because, when the difference phase is zero,
X then measures the signal. Similarly, the filtered output of the second PSD
Vpsd2 gives the out-of-phase component
Y (equal to
Vsigsinθ). Then, using both
X and
Y, amplitude
Vsig and the difference phase
θ of the input signal can be calculated.
In SR830,
X can be outputted after being amplified tenfold, and the output is called the 10X output. In addition, both
X and
Y are continuous signals and therefore have a larger bandwidth than amplitude
Vsig and phase
θ, which are discrete signals.
Appendix III
Bandwidth and Noise of the Lock-in Amplifier
In SR830, the bandwidth is given by the effective noise bandwidth, and specified in the manual (pages 3–11). ENBW is determined by the time constant
Tconst and slope setting, and a simplified calculated formula is also concluded in the manual (pages 3–21). When the slope setting is constant at 24 dB/oct, the relationship between ENBW and
Tconst is
ENBW=5/(64Tconst).(15)
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\begin{equation*}\mbox{ENBW}=5/(64T_{\mathrm{const}}).\tag{15}\end{equation*}From
(15), we can conclude that ENBW has negative correlation with
Tconst. Hence, when
Tconst is reducing, the bandwidth will be expanded. However, this comes at the price of an increasing noise. (Please see the simplified formula of Johnson noise in pages 3–21 of the manual.)
In summary, when the time constant is set smaller, the bandwidth will be larger, but the current noise is increasing as well. This relationship will be verified by the experimental result, as shown in
Fig. 14.